1. Overview & Description:

️· The LS301 is a dual NPN bipolar junction transistor (BJT) in a single SOIC package. It's designed for applications requiring matched characteristics between the two transistors.
️· It boasts high gain, tight VBE matching (Voltage between Base and Emitter) and low output capacitance.
️· This part is offered by Linear Integrated Systems and distributed by Micross Components.

2. Key Features & Benefits:

️· High Current Gain (hFE): Typically ≥ 2000 at 1µA. This means it can amplify small currents significantly.
️· Tight VBE Matching: The difference in the base-emitter voltages (VBE1 - VBE2) is only 0.2 mV, which is important for applications needing a stable and predictable voltage difference between the two transistors.
️· Low Output Capacitance (COBO): ≤ 2.0 pF. Reduces signal distortion and improves high-frequency performance.
️· Current Gain Bandwidth Product (fT): 100 MHz. Indicates how well it performs at high frequencies.
️· Matched Characteristics: Designed specifically with the two transistors having nearly identical performance.

3. Absolute Maximum Ratings (Important for preventing damage):

️· Storage Temperature: -65°C to +200°C
️· Junction Temperature: -55°C to +150°C
️· Continuous Power Dissipation (Single Side): 250 mW
️· Continuous Power Dissipation (Both Sides): 500 mW
️· Linear Derating Factors: Provided to indicate how power dissipation should be reduced at higher temperatures.

4. Electrical Characteristics (Typical Performance):

️· VBE Matching: VBE1-VBE2 = 0.2 mV (typical)
️· Base Current Difference (IB1-IB2): 0.5 nA (typical)
️· Current Gain Difference (hFE1/hFE2): 5% (typical)
️· Collector-Emitter Breakdown Voltage (BVCEO): 18V
️· Collector-Base Breakdown Voltage (BVCEO): 18V
️· Emitter-Base Breakdown Voltage (BVEBO): 6.2V
️· Collector-Collector Breakdown Voltage (BVCCO): 100V
️· Collector-Emitter Saturation Voltage (VCE(SAT)): 0.5V at 1mA collector current
️· Output Capacitance: 2.0 pF
️· Leakage Currents: Specific values provided for ICBO and IC1C2.
️· Noise Figure: NF = 3 dB (at specific test conditions)

5. Package and Ordering Information:

️· Available in SOIC package.
️· Can also be obtained as a bare die.
️· Contact Micross Components for detailed package dimensions and ordering options.

6. Important Notes and Cautions:

️· The datasheet states that Absolute Maximum Ratings are limiting values. Exceeding them *will* damage the device.
️· The reverse base-emitter voltage should not exceed 6.2V.
️· A disclaimer indicates that Linear Integrated Systems assumes no responsibility for the use of the information provided.