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LS3550SC Datasheet with Chat AI

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Part No.	LS3550SC
Manufacturer	MICROSS
Size	277 Kbytes
Pages	1 page
Description	Linear Systems PNP Transistor

Datasheet Summary with AI

· BVCEO (Collector-Emitter Voltage): -20V
· BVEBO (Emitter-Base Breakdown Voltage): -6.2V
· BVCCO (Collector-Collector Voltage): -80V
· hFE (DC Current Gain): 40-50 (varying with collector current and VCE)
· VCE(SAT) (Collector Saturation Voltage): ≤ 1.2V
· IEBO (Emitter Cutoff Current): ≤ 0.2 nA
· ICBO (Collector Cutoff Current): ≤ 0.2 nA
· COBO (Output Capacitance): ≤ 2 pF
· fT (Current Gain Bandwidth Product): 600 MHz
· NF (Narrow Band Noise Figure): 3 dB

## Notes

· Absolute maximum ratings are limiting values.
· Reverse base-to-emitter voltage must not exceed 6.2V.
· Reverse base-to-emitter current must not exceed 10µA.

# LS3550SC PNP Transistor

## Features

· 3-lead SOT-23 package
· Low output capacitance
· Available as bare die and in SOT-23 package
· Ease of manufacturing with SOT-23 package

## Absolute Maximum Ratings

· Storage Temperature: -65°C to +150°C
· Operating Junction Temperature: -55°C to +150°C
· Continuous Power Dissipation: TBD
· Collector Current: 10mA
· Collector to Collector Voltage: 80V

## Electrical Characteristics (@ 25°C)

· BVCBO (Collector-Base Voltage): -20V
· BVCEO (Collector-Emitter Voltage): -20V
· BVEBO (Emitter-Base Breakdown Voltage): -6.2V
· BVCCO (Collector-Collector Voltage): -80V
· hFE (DC Current Gain): 40-50 (varying with collector current and VCE)
· VCE(SAT) (Collector Saturation Voltage): ≤ 1.2V
· IEBO (Emitter Cutoff Current): ≤ 0.2 nA
· ICBO (Collector Cutoff Current): ≤ 0.2 nA
· COBO (Output Capacitance): ≤ 2 pF
· fT (Current Gain Bandwidth Product): 600 MHz
· NF (Narrow Band Noise Figure): 3 dB

## Notes

· Absolute maximum ratings are limiting values.
· Reverse base-to-emitter voltage must not exceed 6.2V.
· Reverse base-to-emitter current must not exceed 10µA.