The IPP048N12N3 G OptiMOS™ 3 Power-Transistor is an N-channel, normal level power transistor with excellent gate charge x RDS(on) product, very low on-resistance, and a 175 °C operating temperature.
It is ideal for high-frequency switching and synchronous rectification and is halogen-free and RoHS compliant.
The maximum ratings include a continuous drain current of 100A at 25 °C, a pulsed drain current of 400A, and a reverse diode d v/dt of 6 kV/µs.
The transistor is qualified according to JEDEC for target applications and is Pb-free.
It also has thermal resistance, thermal characteristics, electrical characteristics, dynamic characteristics, and avalanche characteristics.
The component is available in a PG-TO220-3 package and is marked with 048N12N.
The document also includes warnings and legal disclaimers regarding the use of Infineon Technologies components.