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Hello, Please ask a question about IXFK40N90P Datasheet
# Example questions:
➢ What is the maximum drain current (id) at a case temperature of 125°c, according to figure 6?
➢ How does the rds(on) change as the drain current increases, assuming a constant temperature?
➢ Referring to figure 10, what is the approximate total gate charge (qg) when vds = 450v and id = 20a?
1. Device Identification & Basic Information
️· Type: Power MOSFET
️· Likely Part Number: 40N90P (indicated in the reference at the bottom)
️· Manufacturer: IXYS Corporation
️· Note: IXYS reserves the right to change specifications.
2. Electrical Characteristics (Key Values & Ranges)
️· Voltage Ratings: (Specific values not given directly, but are implied in the graphs). Expect a high Vds (drain-to-source voltage) rating, given the "90" in the part number (likely around 90V). Vgs (gate-to-source voltage) will have a maximum value.
️· Current Ratings: (Specific values implied in graphs). High Drain Current Capability (ID). Maximum values are dependent on case temperature (Tc).
️· On-State Resistance (RDS(on)): This is a crucial parameter.
- Normalized to ID = 20A (values are provided in the "Fig. 5" & "Fig. 6"). It is lower at lower temperatures.
️· Forward Voltage Drop (Intrinsic Diode): Fig. 9 shows this, likely related to the body diode.
️· Dynamic Characteristics (Switching Times): Data would be presented in typical switching characteristics but it is not mentioned explicitly.
️· Input Capacitance, Output Capacitance, and Reverse Transfer Capacitance: "Fig. 11" presents data.
️· Gate Charge: "Fig. 4" illustrates the values.
3. Thermal Characteristics
️· Maximum Drain Current vs. Case Temperature: "Fig. 6" shows IDmax decreasing with increasing Tc.
️· Maximum Transient Thermal Impedance: "Fig. 12". Important for understanding how quickly the device can dissipate heat.
4. Figures & Graphs: Key Takeaways
️· Fig. 6: Maximum Drain Current vs. Case Temperature: Shows how IDmax changes with TC. Lower TC means higher IDmax.
️· Fig. 3: Output Characteristics @ 125ºC: Graph of Vds vs. Id at a specific temperature.
️· Fig. 2: Extended Output Characteristics @ 25ºC: Graph of Vds vs. Id at room temperature.
️· Fig. 8: Transconductance: Shows the relationship between the drain current (Id) and the gate-source voltage (Vgs).
️· Fig. 3 & 2: Shows how output characteristics changes with temperature.
5. Important Notes & Considerations (READ THIS!)
️· Datasheet is incomplete: This is a *partial* datasheet. Key parameters like gate threshold voltage (Vth), gate charge (Qg), and precise voltage/current ratings are not given explicitly. You're meant to infer them from the graphs or refer to a complete datasheet.
️· Temperature Dependence: Almost every parameter is affected by temperature. Pay very close attention to the graphs showing this.
️· Case Temperature (Tc): Critical for reliable operation. Make sure your heatsink and mounting arrangements keep the case temperature within safe limits.
️· Transient Thermal Impedance: This limits how much power you can deliver in short pulses.
️· Complete Datasheet: Locate the full IXYS 40N90P datasheet for complete specifications and application guidelines.
1. Device Identification & Basic Information
️· Type: Power MOSFET
️· Likely Part Number: 40N90P (indicated in the reference at the bottom)
️· Manufacturer: IXYS Corporation
️· Note: IXYS reserves the right to change specifications.
2. Electrical Characteristics (Key Values & Ranges)
️· Voltage Ratings: (Specific values not given directly, but are implied in the graphs). Expect a high Vds (drain-to-source voltage) rating, given the "90" in the part number (likely around 90V). Vgs (gate-to-source voltage) will have a maximum value.
️· Current Ratings: (Specific values implied in graphs). High Drain Current Capability (ID). Maximum values are dependent on case temperature (Tc).
️· On-State Resistance (RDS(on)): This is a crucial parameter.
- Normalized to ID = 20A (values are provided in the "Fig. 5" & "Fig. 6"). It is lower at lower temperatures.
️· Forward Voltage Drop (Intrinsic Diode): Fig. 9 shows this, likely related to the body diode.
️· Dynamic Characteristics (Switching Times): Data would be presented in typical switching characteristics but it is not mentioned explicitly.
️· Input Capacitance, Output Capacitance, and Reverse Transfer Capacitance: "Fig. 11" presents data.
️· Gate Charge: "Fig. 4" illustrates the values.
3. Thermal Characteristics
️· Maximum Drain Current vs. Case Temperature: "Fig. 6" shows IDmax decreasing with increasing Tc.
️· Maximum Transient Thermal Impedance: "Fig. 12". Important for understanding how quickly the device can dissipate heat.
4. Figures & Graphs: Key Takeaways
️· Fig. 6: Maximum Drain Current vs. Case Temperature: Shows how IDmax changes with TC. Lower TC means higher IDmax.
️· Fig. 3: Output Characteristics @ 125ºC: Graph of Vds vs. Id at a specific temperature.
️· Fig. 2: Extended Output Characteristics @ 25ºC: Graph of Vds vs. Id at room temperature.
️· Fig. 8: Transconductance: Shows the relationship between the drain current (Id) and the gate-source voltage (Vgs).
️· Fig. 3 & 2: Shows how output characteristics changes with temperature.
5. Important Notes & Considerations (READ THIS!)
️· Datasheet is incomplete: This is a *partial* datasheet. Key parameters like gate threshold voltage (Vth), gate charge (Qg), and precise voltage/current ratings are not given explicitly. You're meant to infer them from the graphs or refer to a complete datasheet.
️· Temperature Dependence: Almost every parameter is affected by temperature. Pay very close attention to the graphs showing this.
️· Case Temperature (Tc): Critical for reliable operation. Make sure your heatsink and mounting arrangements keep the case temperature within safe limits.
️· Transient Thermal Impedance: This limits how much power you can deliver in short pulses.
️· Complete Datasheet: Locate the full IXYS 40N90P datasheet for complete specifications and application guidelines.
| Part No. | IXFK40N90P |
| Manufacturer | IXYS |
| Size | 124 Kbytes |
| Pages | 4 pages |
| Description | Polar Power MOSFET HiPerFET |
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