# BAS86 Schottky Barrier Diode

## Features
· Low forward voltage
· Guard ring protected
· Hermetically-sealed leaded glass package
· High breakdown voltage

## Absolute Maximum Ratings (Ta = 25°C)
· Continuous Reverse Voltage (VR): 50 V
· Continuous Forward Current (IF): 200 mA
· Average Forward Current (IF(AV)): 200 mA
· Repetitive Peak Forward Current (IFRM): 500 mA
· Non-Repetitive Peak Forward Current (IFSM): 5 A
· Operating Ambient Temperature (Tamb): -65 to +125 °C
· Junction Temperature (Tj): 125 °C
· Storage Temperature Range (TS): -65 to +150 °C
· Thermal Resistance (Rthj-a): 320 K/W

## Characteristics (Ta = 25°C)

· Forward Voltage (VF):
- at IF = 0.1mA: 300 mV
- at IF = 1mA: 380 mV
- at IF = 10mA: 450 mV
- at IF = 30mA: 600 mV
- at IF = 100mA: 900 mV
· Reverse Current (IR) at VR = 40V: 5 μA
· Reverse Recovery Time (trr) at IF = 10mA, IR = 10mA, RL = 100Ω: 4 ns
· Diode Capacitance (Cd) at VR = 1V, f = 1MHz: 8 pF

## Notes
· Pulsed test: tp=300μs; δ=0.02 (for reverse current measurement)

# SEMTECH ELECTRONICS LTD.
· Subsidiary of Sino-Tech International Holdings Limited
· Listed on the Hong Kong Stock Exchange (Stock Code: 724)
· Dated: 12/03/2005