# INCHANGE Semiconductor - isc Silicon NPN Power Transistor 3DD301B

## General Description

· Designed for B/W TV vertical output applications.
· Collector-Emitter Breakdown Voltage: V(BR)CEO = 50V (Min)
· Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V (Max) @ IC = 3A

## Absolute Maximum Ratings (Ta=25°C)

· VCBO: Collector-Base Voltage: 80V
· VCEO: Collector-Emitter Voltage: 50V
· VEBO: Emitter-Base Voltage: 4V
· IC: Collector Current-Continuous: 5A
· PC: Collector Power Dissipation: 30W @ TC=25℃
· TJ: Junction Temperature: 150 ℃
· Tstg: Storage Temperature Range: -55~150 ℃

## Thermal Characteristics

· Rth j-c: Thermal Resistance, Junction to Case: 2.5 ℃/W

## Electrical Characteristics (TC=25°C unless otherwise specified)

· V(BR)CEO: Collector-Emitter Breakdown Voltage: 50V (Min) @ IC= 5mA; IB= 0
· V(BR)EBO: Emitter-Base Breakdown Voltage: 4V @ IE= 1mA; IC= 0
· V(BR)CBO: Collector-Base Breakdown Voltage: 80V @ IC= 5mA; IE= 0
· VCE(sat): Collector-Emitter Saturation Voltage: 2.0V (Max) @ IC= 3A; IB= 0.3A
· ICBO: Collector Cutoff Current: 0.5mA (Max) @ VCB= 50V; IE= 0
· IEBO: Emitter Cutoff Current: 0.1mA (Max) @ VEB= 4V; IC= 0
· hFE: DC Current Gain: 30-250 @ IC= 3A; VCE= 5V

## Website

· www.iscsemi.cn