# BUV46 / BUV46A NPN Power Transistors

## Overview
️· High voltage NPN silicon power transistors for fast switching applications.
️· Available in TO-220 plastic package.
️· Preferred types by STMicroelectronics.

## Absolute Maximum Ratings

Parameter	BUV46	BUV46A	Unit
Collector-Emitter Voltage (VBE=0)	850	1000	V
Collector-Emitter Voltage (VBE=-2.5V)	850	1000	V
Collector-Emitter Voltage (IB=0)	400	450	V
Emitter-Base Voltage (IC=0)	7	7	V
Collector Current	5	5	A
Base Current	3	3	A
Total Dissipation (Tc=25°C)	70	70	W
Storage Temperature	-65 to 150	-65 to 150	°C
Junction Temperature (Max)	150	150	°C

## Electrical Characteristics (Tcase = 25°C)

Parameter	Test Conditions	Min	Typ	Max	Unit
Collector Cut-off Current (ICER)	VCE=VCEX	0.1	1		mA
Collector Cut-off Current (ICEX)	VCE=VCEX, VBE=-2.5V	0.3	2		mA
Emitter Cut-off Current (IEBO)	VBE=7V		1		mA
Collector-Emitter Sustaining Voltage (VCEO(sus))	IC=100mA	400	450		V
Collector-Emitter Saturation Voltage (VCE(sat))	IC=2.5A, IB=0.5A (BUV46) / IC=2A, IB=0.4A (BUV46A)	1.5			V
Base-Emitter Saturation Voltage (VBE(sat))	IC=2.5A, IB=0.5A (BUV46) / IC=2A, IB=0.4A (BUV46A)	1.3			V
Turn-On Time (ton)	Resistive Load	1			µs
Storage Time (ts)	Resistive Load	3			µs
Fall Time (tf)	Resistive Load	0.8			µs

## Package Information
️· TO-220 plastic package.
️· Detailed mechanical dimensions available in datasheet.