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# Example questions:
➢ What is the typical gate trigger voltage (vgt) for this thyristor, and what is the corresponding gate trigger current (igt)?
➢ What is the maximum operating junction temperature (tj) for this thyristor, and what is the thermal impedance from junction to case (rth(j-h))?
➢ What are the critical rate-of-rise of on-state current (di/dt) and off-state voltage (dv/dt) specifications for this device?
| Part No. | AT302 |
| Manufacturer | POSEICO |
| Size | 43 Kbytes |
| Pages | 4 pages |
| Description | PHASE CONTROL THYRISTOR |
## Summary of AT302S08 Thyristor/SCR Datasheet
This document details the specifications of the AT302S08 Thyristor (also known as an SCR - Silicon Controlled Rectifier). Here's a breakdown of key features and specifications:
Core Characteristics:
️· Voltage Rating: Designed for applications with a maximum repetitive peak reverse voltage of 800V and a repetitive peak forward voltage of up to a certain point.
️· Current Rating: Can handle a significant amount of current (up to 1000A in some conditions), making it suitable for high-power control applications. The average forward current is around 60A.
️· Applications: Ideal for AC power control, rectification, and switching.
Key Electrical Parameters:
️· On-State Voltage (V<sub>T</sub>): 1.25V at 1000A.
️· Holding Current (I<sub>H</sub>): 300mA. The minimum current required to maintain conduction.
️· Latching Current (I<sub>L</sub>): 700mA. The current at which the SCR will reliably switch on and remain on.
️· Gate Trigger Voltage (V<sub>GT</sub>): 3.5V
️· Gate Trigger Current (I<sub>GT</sub>): 200mA
Thermal Characteristics:
️· Operating Junction Temperature (T<sub>j</sub>): -30°C to +150°C
️· Thermal Impedance (R<sub>th(j-h)</sub>): 50°C/W (junction to heatsink) – indicates how effectively heat is dissipated.
Switching Characteristics:
️· di/dt (Critical Rate of Rise of On-State Current): 200 A/µs - The maximum rate at which the current can increase without causing unwanted triggering.
️· dv/dt (Critical Rate of Rise of Off-State Voltage): 500 V/µs - The maximum rate at which the voltage can change without causing unwanted triggering.
Other important features:
️· Gate Control: The SCR is turned on by applying a current pulse to the gate terminal.
️· Robustness: Designed for reliable operation in demanding industrial environments.
️· Mounting: Requires a heatsink for efficient heat dissipation.
️· Packaging: Specific cathode and gate terminal types are defined for connection.
Datasheet Contents:
The document includes detailed graphs and tables showing the SCR's performance characteristics under various operating conditions. This includes:
️· Dissipation Characteristics: Illustrates how power dissipation affects temperature.
️· On-State Characteristics: Shows the relationship between on-state voltage and current.
️· Transient Thermal Impedance: Provides information about thermal behavior.
️· Surge Characteristics: Defines the SCR’s ability to withstand short-duration voltage spikes.
In essence, the AT302S08 is a high-power, gate-controlled switch designed for applications where precise control and robust performance are essential.
## Summary of AT302S08 Thyristor/SCR Datasheet
This document details the specifications of the AT302S08 Thyristor (also known as an SCR - Silicon Controlled Rectifier). Here's a breakdown of key features and specifications:
Core Characteristics:
️· Voltage Rating: Designed for applications with a maximum repetitive peak reverse voltage of 800V and a repetitive peak forward voltage of up to a certain point.
️· Current Rating: Can handle a significant amount of current (up to 1000A in some conditions), making it suitable for high-power control applications. The average forward current is around 60A.
️· Applications: Ideal for AC power control, rectification, and switching.
Key Electrical Parameters:
️· On-State Voltage (V<sub>T</sub>): 1.25V at 1000A.
️· Holding Current (I<sub>H</sub>): 300mA. The minimum current required to maintain conduction.
️· Latching Current (I<sub>L</sub>): 700mA. The current at which the SCR will reliably switch on and remain on.
️· Gate Trigger Voltage (V<sub>GT</sub>): 3.5V
️· Gate Trigger Current (I<sub>GT</sub>): 200mA
Thermal Characteristics:
️· Operating Junction Temperature (T<sub>j</sub>): -30°C to +150°C
️· Thermal Impedance (R<sub>th(j-h)</sub>): 50°C/W (junction to heatsink) – indicates how effectively heat is dissipated.
Switching Characteristics:
️· di/dt (Critical Rate of Rise of On-State Current): 200 A/µs - The maximum rate at which the current can increase without causing unwanted triggering.
️· dv/dt (Critical Rate of Rise of Off-State Voltage): 500 V/µs - The maximum rate at which the voltage can change without causing unwanted triggering.
Other important features:
️· Gate Control: The SCR is turned on by applying a current pulse to the gate terminal.
️· Robustness: Designed for reliable operation in demanding industrial environments.
️· Mounting: Requires a heatsink for efficient heat dissipation.
️· Packaging: Specific cathode and gate terminal types are defined for connection.
Datasheet Contents:
The document includes detailed graphs and tables showing the SCR's performance characteristics under various operating conditions. This includes:
️· Dissipation Characteristics: Illustrates how power dissipation affects temperature.
️· On-State Characteristics: Shows the relationship between on-state voltage and current.
️· Transient Thermal Impedance: Provides information about thermal behavior.
️· Surge Characteristics: Defines the SCR’s ability to withstand short-duration voltage spikes.
In essence, the AT302S08 is a high-power, gate-controlled switch designed for applications where precise control and robust performance are essential.
| Part No. | AT302 |
| Manufacturer | POSEICO |
| Size | 43 Kbytes |
| Pages | 4 pages |
| Description | PHASE CONTROL THYRISTOR |
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