# ISUM6028, VUO25-12NO8: Three Phase Rectifier Bridge

## Description

· Planar passivated chips
· Blocking voltage up to 1800 V
· Low forward voltage drop

## Absolute Maximum Ratings

SYMBOL	PARAMETER	VALUE	UNIT
VRRM	Max reverse voltage	1200	V
IdAV	DC current (TC=85℃, module)	20	A
IdAVM	DC current (TC=63℃, module)	25	A
IFSM (50Hz)	TVJ = 45℃, t = 10ms	380	A
IFSM (60Hz)	VR = 0, t = 8.3ms	400	A
I2t (50Hz)	TVJ = 45℃, t = 10ms	725	A2S
I2t (60Hz)	VR = 0, t = 8.3ms	750	A2S
VISOL	Insulation test voltage (50/60Hz)	2500	V~
TJ	Junction Temperature	-40~150	℃
Tstg	Storage Temperature Range	-40~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c (diode)	Thermal Resistance, Junction to Case	9.3	℃/W
Rth j-c (module)	Thermal Resistance, Junction to Case	1.55	℃/W
Rth j-h (module)	Thermal Resistance, Junction to Heatsink	10.20	℃/W

## Electrical Characteristics

SYMBOL	PARAMETER	CONDITIONS	MAX	UNIT
VF	Diode Forward Voltage	IF=12.5A; TC=25℃	1.05	V
IR	Reverse Current	VR=1200V; TJ=25℃	10	uA

## Package Outline (mm)

DIM	MIN	MAX
A	23.10	24.10
B	23.10	24.10
C	28.20	28.80
D	16.00	17.00
E	22.00	25.00
F	9.40	10.00
G	6.20	6.40
H	0.75	0.85

## Disclaimer

· Product specifications are subject to change without notice.
· Intended for general electronic equipment applications.
· Not designed for use in equipment requiring specialized quality or reliability, or hazardous environments.