# MSC1015MP RF & Microwave Transistor

## Description
· Gold-metallized, epitaxial silicon NPN power transistor
· Designed for high-peak power, low-duty cycle applications (IFF, DME, TACAN)
· Packaged in a .280" input-matched stripline package for improved broadband performance and low thermal resistance

## Features
· Applications: IFF, DME, TACAN
· Power Output (typical):
- IFF: 20W (1030-1090 MHz)
- DME: 15W (min) (1025-1150 MHz)
- TACAN: 15W (1090-1215 MHz)
· Metallization: Refractory gold
· Design: Emitter ballasting, low thermal resistance
· VSWR: 20:1 load VSWR capability
· Configuration: Input matched, common base

## Absolute Maximum Ratings (Tcase = 25°C)

Parameter	Value	Unit
V CBO (Collector-Base Voltage)	65	V
V CES (Collector-Emitter Voltage)	65	V
V EBO (Emitter-Base Voltage)	3.5	V
IC (Device Current)	1.5	A
PDISS (Power Dissipation)	87.5	W
TJ (Junction Temperature)	+200	°C
TSTG (Storage Temperature)	–65 to +150	°C

## Thermal Data
· RTH(j-c) (Junction-Case Thermal Resistance): 2 °C/W

## Electrical Specifications (Tcase = 25°C)

Static

Symbol	Test Conditions	Min	Typ	Max	Units
BV CBO	IC = 10 mA, IE = 0 mA	65			V
BV CES	IC = 25 mA, V BE = 0 V	65			V
BV EBO	IE = 1 mA, IC = 0 mA	3.5			V
ICES	V CE = 50 V, IE = 0 mA			2
hFE	V CE = 5 V, IC = 0.1 A	10		200

Dynamic

Symbol	Test Conditions	Min	Typ	Max	Units
POUT	f = 1025-1150 MHz, PIN = 1.5 W, V CE = 50 V	15			W
GP	f = 1025-1150 MHz, PIN = 1.5 W, V CE = 50 V	10			dB
çC	f = 1025-1150 MHz, PIN = 1.5 W, V CE = 50 V	30			%

Note: Pulse Width = 10µs, Duty Cycle = 1%

Impedance Data

Freq. (MHz)	Z IN (Ω)	Z CL (Ω)
960	2.5 + j 12.5	17.0 + j 15.5
1030	3.5 + j 12.5	17.0 + j 14.5
1090	3.0 + j 13.5	19.5 + j 12.5
1150	3.5 + j 14.0	18.0 + j 12.0
1215	5.0 + j 17.0	16.0 + j 12.0