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Hello, Please ask a question about TA20141803DH Datasheet
# Example questions:
➢ What is the maximum allowable junction temperature for this thyristor?
➢ What is the typical turn-off time under the conditions of itm = 1000a, di/dt = 25a/µs, dv/dt = 30v/µs, and tj = 125°c?
➢ How much dc gate current is required to trigger this device at a junction temperature of 25°c?
# TA20141803DH Phase Control Thyristors
## Features
· High frequency operation
· Low forward voltage drop
· Low switching losses at high frequency
· Minimum Lot-to-Lot variations for robust device performance and reliable operation
## Applications
· Compact, encapsulated three-phase bridge rectifiers
· General purpose and heavy duty applications
## Absolute Maximum Ratings
· VRRM (Repetitive Peak Reverse Voltage): 1400 V
· VDRM (Repetitive Peak Forward Blocking Voltage): 1400 V
· IT(AV) (Average Forward Current): 1800 A (at 65°C)
· IT(RMS) (RMS on-state current): 2800 A
· ITSM (Peak, one-cycle surge current): 40000 A (at 125°C)
· TJ (Junction Temperature): -40~125 °C
· Tstg (Storage Temperature Range): -40~150 °C
## Thermal Characteristics
· Rthj-c (Thermal Resistance, Junction to Case): 0.018 °C/W
## Electrical Characteristics
· VTM (Forward Voltage Drop): 1.45 V (at 3000 A, 25°C)
· IDRM/IRRM (Peak Reverse and Off-State Leakage Current): 25 mA
· IGT (DC Gate Current): 150 mA (VD=12V, RL=3Ω, 25°C)
· VGT (DC Gate Voltage): 3 V (VD=12V, RL=3Ω, 25°C)
· tq (Typical Turn-off Time): 250 µs (ITM = 1000A, di/dt=25A/µs,dV/dt=30V/µs, TJ=125°C)
## Package Outline
· Dimensions available in mm (1mm = 0.0394”)
Website: [www.iscsemi.cn](http://www.iscsemi.cn)
# TA20141803DH Phase Control Thyristors
## Features
· High frequency operation
· Low forward voltage drop
· Low switching losses at high frequency
· Minimum Lot-to-Lot variations for robust device performance and reliable operation
## Applications
· Compact, encapsulated three-phase bridge rectifiers
· General purpose and heavy duty applications
## Absolute Maximum Ratings
· VRRM (Repetitive Peak Reverse Voltage): 1400 V
· VDRM (Repetitive Peak Forward Blocking Voltage): 1400 V
· IT(AV) (Average Forward Current): 1800 A (at 65°C)
· IT(RMS) (RMS on-state current): 2800 A
· ITSM (Peak, one-cycle surge current): 40000 A (at 125°C)
· TJ (Junction Temperature): -40~125 °C
· Tstg (Storage Temperature Range): -40~150 °C
## Thermal Characteristics
· Rthj-c (Thermal Resistance, Junction to Case): 0.018 °C/W
## Electrical Characteristics
· VTM (Forward Voltage Drop): 1.45 V (at 3000 A, 25°C)
· IDRM/IRRM (Peak Reverse and Off-State Leakage Current): 25 mA
· IGT (DC Gate Current): 150 mA (VD=12V, RL=3Ω, 25°C)
· VGT (DC Gate Voltage): 3 V (VD=12V, RL=3Ω, 25°C)
· tq (Typical Turn-off Time): 250 µs (ITM = 1000A, di/dt=25A/µs,dV/dt=30V/µs, TJ=125°C)
## Package Outline
· Dimensions available in mm (1mm = 0.0394”)
Website: [www.iscsemi.cn](http://www.iscsemi.cn)
| Part No. | TA20141803DH |
| Manufacturer | ISC |
| Size | 228 Kbytes |
| Pages | 2 pages |
| Description | Phase Control Thyristors |
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