# 2SA1080 Silicon PNP Power Transistor

## Description

️· Collector-Emitter Breakdown Voltage: V(BR)CEo = -40V (Min.)
️· Good Linearity of hFE
️· Complement to Type 2SC2530
️· Designed for medium power amplifier applications.

## Absolute Maximum Ratings (Ta=25°C)

️· Collector-Base Voltage (VCBO): -40V
️· Collector-Emitter Voltage (VCEO): -40V
️· Emitter-Base Voltage (VEBO): -7V
️· Collector Current (Ic): -0.5A
️· Collector Power Dissipation (PC): 20W
️· Junction Temperature (Tj): 150°C
️· Storage Temperature Range (Tslg): -65-150°C

## Dimensions (in mm)

️· A: 15.50 - 15.90
️· B: 9.90 - 10.20
️· C: 4.20
️· D: 0.70
️· F: 3.40
️· G: 4.98
️· H: 2.68
️· J: 0.44
️· K: 13.00
️· L: 1.20
️· Q: 2.70
️· R: 2.30
️· S: 1.29
️· U: 6.45
️· V: 8.66

## Electrical Characteristics (Tc=25°C unless otherwise specified)

️· Collector-Emitter Breakdown Voltage (V(BR)CEO): -40V (Min.)
️· Collector-Base Breakdown Voltage (V(BR)CBO): -40V
️· Emitter-Base Breakdown Voltage (V(BR)EBO): -7V
️· Collector-Emitter Saturation Voltage (VcE(sat)): 100 - -0.5V
️· Base-Emitter Saturation Voltage (VBE(sat)): -1.0V
️· Collector Cutoff Current (ICBO): -100nA
️· Collector Cutoff Current (ICEO): -500nA
️· Emitter Cutoff Current (IEBO): -100nA
️· DC Current Gain (HFE): 65 (Typ), 350 (Min)
️· Output Capacitance (COB): -nA
️· Current-Gain – Bandwidth Product (fT): -MHz