Fabricant | No de pièce | Fiches technique | Description |
International Rectifier |
IRG4RC10KDPBF
|
326Kb/12P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
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Total : 16 ( 1/1 Page) |
International Rectifier |
IRG4RC10KD
|
190Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
|
IRG4RC10KPBF
|
188Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
IRG4RC10S
|
120Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)
|
IRG4RC10SD
|
189Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
|
IRG4RC10SDPBF
|
353Kb/11P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRG4RC10SDPBF
|
353Kb/11P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRG4RC10SDPBF
|
353Kb/11P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRG4RC10U
|
131Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
IRG4RC10UD
|
191Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
IRG4RC10UDPBF
|
308Kb/11P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRG4RC10UDPBF
|
308Kb/11P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRG4RC10UDPBF
|
308Kb/11P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRG4RC10UPBF
|
654Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR
|
IRG4RC10UPBF
|
654Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR
|
IRG4RC10UPBF
|
654Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR
|
IRG4RC10UTRPBF
|
654Kb/10P |
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
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