Fabricant | No de pièce | Fiches technique | Description |
NEC |
2SA812
|
241Kb / 4P |
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
2SC4177
|
256Kb / 4P |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
2SB1475
|
261Kb / 4P |
PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER
|
Toshiba Semiconductor |
HN1A01F
|
224Kb / 4P |
Silicon PNP Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier
|
HN1A01F
|
157Kb / 2P |
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
HN1A01FU
|
155Kb / 2P |
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
HN3B01F
|
266Kb / 5P |
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
HN2A01FU
|
156Kb / 2P |
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
NEC |
2SC1623
|
60Kb / 6P |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
Toshiba Semiconductor |
HN1A01FE
|
193Kb / 3P |
Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|