Fabricant | No de pièce | Fiches technique | Description |
Cree, Inc |
PTFB091802FC
|
538Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz
|
PTFB091507FH
|
618Kb / 13P |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
|
Infineon Technologies A... |
PTFB091507FH
|
1,015Kb / 13P |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
Rev. 03.1, 2016-06-09 |
PTFB091507FH
|
1Mb / 13P |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz
Rev. 03, 2011-03-14 |
Cree, Inc |
PTFB093608FV
|
1Mb / 13P |
Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 ??960 MHz
|
Infineon Technologies A... |
PTFA091503EL
|
627Kb / 11P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz
Rev. 03, 2010-08-11 |
PTFA091503EL
|
766Kb / 11P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 ??960 MHz
Rev. 04, 2016-06-16 |
PTFB090901EA
|
226Kb / 14P |
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz
Rev. 04, 2012-02-23 |
Cree, Inc |
PTFB090901EA
|
710Kb / 14P |
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 ??960 MHz
|
WOLFSPEED, INC. |
PTRA097008NB
|
556Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz
Rev. 04, 2023-06-22 |