Fabricant | No de pièce | Fiches technique | Description |
Cree, Inc |
PXAC201602FC
|
529Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz
|
PXAC203302FV
|
436Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 - 2025 MHz
|
Infineon Technologies A... |
PXAC203302FV
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz
Rev. 02.1, 2016-06-22 |
PXAD184218FV
|
339Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz
Rev. 02.1, 2016-12-07 |
PXAC182002FC
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
Rev. 02.3, 2016-06-17 |
Cree, Inc |
PXAE184408NB
|
1Mb / 6P |
Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz
|
PXAC182002FC
|
495Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
|
PXFE181507FC
|
550Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz
|
Infineon Technologies A... |
PXFC193808SV
|
196Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 ??1880 MHz
Rev. 02.1, 2015-01-13 |
Cree, Inc |
PXAE183708NB
|
486Kb / 6P |
Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 1805 ??1880 MHz
|