Fabricant | No de pièce | Fiches technique | Description |
Toshiba Semiconductor |
SSM5H90ATU
|
240Kb / 9P |
Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar
|
SSM5H06FE
|
230Kb / 8P |
Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
SSM5H14F
|
319Kb / 7P |
Silicon N Channel MOS Type (U-MOS??/Silicon Epitaxial Schottky Barrier Diode
|
SSM5H01TU
|
213Kb / 10P |
Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
SSM5H16TU
|
200Kb / 7P |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
SSM5H08TU
|
314Kb / 10P |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
SSM5H11TU
|
228Kb / 8P |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
SSM5G06FE
|
298Kb / 8P |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
SSM6G18NU
|
254Kb / 8P |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
TPCP8BA1
|
215Kb / 4P |
Silicon P Channel MOS Type (U-MOS-II) / Silicon Epitaxial Schottky Barrier Diode
|