Fabricant | No de pièce | Fiches technique | Description |
Cree, Inc |
CGH31240F
|
2Mb / 12P |
240 W, 2700-3100 MHz, 50-ohm Input
|
CGH35240F
|
1Mb / 12P |
240 W, 3100-3500 MHz, 50-ohm Input/
|
CGHV59350
|
3Mb / 12P |
350 W, 5200 - 5900 MHz, 50-Ohm Input
|
CGHV50200F
|
2Mb / 15P |
200 W, 4400 - 5000 MHz, 50-Ohm Input
|
CGHV35400F
|
829Kb / 11P |
400 W, 2900 - 3500 MHz, 50-Ohm Input
|
GTVA311801FA
|
463Kb / 5P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 180 W, 50 V, 2700 ??3100 MHz
|
Microsemi Corporation |
2731-100M
|
298Kb / 5P |
100 Watts, 36 Volts, 200us, 10% Radar 2700-3100 MHz
|
2731-20
|
63Kb / 3P |
20Watts, 36 Volts, 100us, 10% Radar 2700-3100 MHz
|
National Instruments Co... |
PXI-2593
|
537Kb / 4P |
500 MHz bandwidth/50 OHM characteristic impedance
|
TriQuint Semiconductor |
TQM8M9079
|
604Kb / 8P |
500-2700 MHz Variable Gain Amplifier
|