Fabricant | No de pièce | Fiches technique | Description |
New Jersey Semi-Conduct... |
MTP4N50E
|
171Kb / 2P |
High Energy Power FET
|
ON Semiconductor |
MTB16N25E
|
280Kb / 11P |
High Energy Power FET
August, 2006 ??Rev. 1 |
MMFT2N25E
|
142Kb / 6P |
High Energy Power FET
May, 2013 ??Rev. 2 |
MTB3N60E
|
146Kb / 4P |
High Energy Power FET
August, 2006 ??Rev. 1 |
MTB9N25E
|
293Kb / 12P |
High Energy Power FET
August, 2006 ??Rev. 1 |
MTB2N60E
|
269Kb / 10P |
High Energy Power FET
August, 2006 ??Rev. 1 |
MTP3N60E
|
235Kb / 8P |
High Energy Power FET
August, 2006 ??Rev. 3 |
MTB3N100E
|
285Kb / 11P |
High Energy Power FET
August, 2006 ??Rev. 3 |
MTP4N50E
|
261Kb / 10P |
High Energy Power FET
August, 2006 ??Rev. 2 |
Motorola, Inc |
MTH8N50E
|
631Kb / 6P |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|