| Fabricant | No de pièce | Fiches technique | Description |
Renesas Technology Corp |
RMQSKA3636DGBA
|
399Kb / 31P |
36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.0 Cycle Read latency) with ODT
May 25, 2015 |
|
RMQSDA3636DGBA
|
898Kb / 31P |
36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
|
|
RMQSGA3636DGBA
|
853Kb / 30P |
36-Mbit QDR??II SRAM 4-word Burst Architecture (2.0 Cycle Read latency)
|
Cypress Semiconductor |
CY7C1241V18
|
1Mb / 28P |
36-Mbit QDR??II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Renesas Technology Corp |
RMQSDA3636DGBA
|
403Kb / 31P |
36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
May 25, 2015 |
|
RMQSGA3636DGBA
|
359Kb / 30P |
36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.0 Cycle Read latency)
May 25, 2015 |
|
R1QKA4436RBG
|
967Kb / 31P |
144-Mbit QDR?줚I SRAM 4-word Burst Architecture(2.0 Cycle Read latency) with ODT
|
Cypress Semiconductor |
CY7C2245KV18
|
841Kb / 28P |
36-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) with ODT
|
Renesas Technology Corp |
RMQSAA3636DGBA
|
832Kb / 30P |
36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency)
|
Cypress Semiconductor |
CY7C1141V18
|
1Mb / 28P |
18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
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