Fabricant | No de pièce | Fiches technique | Description |
IXYS Corporation |
IXKC19N60C5
|
120Kb / 4P |
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
|
IXKR47N60C5
|
137Kb / 4P |
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
|
IXKH30N60C5
|
112Kb / 4P |
CoolMOS Power MOSFET N-Channel Enhancement Mode Low Rdson, High Vdss MOSFET
|
IXKH35N60C5
|
114Kb / 4P |
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
|
IXKC15N60C5
|
119Kb / 4P |
Electrically isolated back surface Electrically isolated back surface
|
IXGC16N60B2
|
92Kb / 2P |
Electrically Isolated Back Surface
|
DSS20-01AC
|
121Kb / 4P |
Electrically Isolated Back Surface
|
IXFR38N80Q2
|
568Kb / 5P |
Electrically Isolated Back Surface
|
DSEE8-06CC
|
65Kb / 2P |
Electrically Isolated Back Surface
|
IXUC100N055
|
575Kb / 2P |
Electrically Isolated Back Surface
|