General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Features
■ 4 A, 60 V. RDS(ON) = 0.100 W @ VGS = 10 V,
                    RDS(ON) = 0.120 W @ VGS = 4.5 V.
■ Low drive requirements allowing operation directly from logic
   drivers. VGS(TH) < 2V.
■ High density cell design for extremely low RDS(ON).
■ High power and current handling capability in a widely used
   surface mount package.