General Description
These dual P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.

Features
■ -0.34A, -50V. RDS(ON)= 5W @ VGS=-10V.
■ High density cell design for low RDS(ON).
■ Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
■ High saturation current.