| Fabricant | No de pièce | Fiches technique | Description |
Roithner LaserTechnik G... |
LD808-2-TO3
|
242Kb / 2P |
Output Power: 2.0w(CW) Variety of stripe width Efficient quantum well structure
|
|
LDM-0808-300M-91
|
186Kb / 3P |
CW Output Power: 300mW Typical 808 nm Emission Wavelength High-deeiciency Quantum Well Structure TO5 Package
|
|
LDM-0980-300M-92
|
179Kb / 3P |
CW Output Power: 300 mW Typical 975 nm Emission Wavelength High-effciency Quantum Well Structure TO5 Package
|
|
LDM-0808-1000-93
|
184Kb / 3P |
CW Output Power: 1 W Typical 808 nm Emission Wavelength High-efficiency Quantum Well Structure TO5 Package
|
California Eastern Labs |
NX5530SA
|
184Kb / 5P |
1 550 nm Multiple Quantum Well (MQW) structured
|
Hitachi Semiconductor |
HL6724MG
|
24Kb / 5P |
The HL6724MG is a 0.67 um band AlGaInP laser diode with a multi-quantum well (MQW) structure
|
Hamamatsu Corporation |
L9277
|
161Kb / 2P |
Lateral multimode (broad stripe) CW Laser Diode
|
PHOENIX CONTACT |
2202096
|
52Kb / 2P |
Variety of connection technologies
|
Tyco Electronics |
S86R
|
114Kb / 2P |
Variety of mounting styles
|
ETA-USA |
VTA05-SC12
|
6Mb / 3P |
25W Variety of Models
|
French ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
