Fabricant | No de pièce | Fiches technique | Description |
IXYS Corporation |
IXKH35N60C5
|
114Kb / 4P |
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
|
IXKC25N80C
|
119Kb / 4P |
N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface
|
IXKC19N60C5
|
120Kb / 4P |
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
|
IXKR47N60C5
|
137Kb / 4P |
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
|
AiT Semiconductor Inc. |
AM2302
|
1Mb / 9P |
MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET
REV1.1 |
AM2306
|
703Kb / 8P |
MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET
REV3.1 |
AM8205
|
886Kb / 11P |
MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET
REV3.0 - JUN 2010 |
Microsemi Corporation |
MSAFA75N10C
|
83Kb / 4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
GTM CORPORATION |
GP9973
|
335Kb / 4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
GE20N03
|
296Kb / 5P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|