Fabricant | No de pièce | Fiches technique | Description |
Renesas Technology Corp |
RJK0305DPB-02
|
169Kb / 7P |
30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching
Jan 07, 2015 |
RJK03F0DPA
|
123Kb / 7P |
30V, 30A, 6.4m max. N Channel Power MOS FET High Speed Power Switching
|
RJK0305DPB-02
|
170Kb / 7P |
30V, 30A, 8.0m廓max Silicon N Channel Power MOS FET Power Switching
|
RJK03M6DPA
|
160Kb / 7P |
30V, 30A, 9.4m max. N Channel Power MOS FET High Speed Power Switching
|
RJK03M5DPA
|
143Kb / 7P |
30V, 30A, 6.5m廓max. N Channel Power MOS FET High Speed Power Switching
|
SHENZHEN FUMAN ELECTRON... |
3418
|
152Kb / 1P |
30V P-channel MOS FET
|
4407A
|
232Kb / 3P |
30V P-Channel Increased MOS FET
|
TC4953L
|
250Kb / 3P |
30V P-Channel Enhancement MOS FET
|
PFC Device Inc. |
PFR30L30CT
|
772Kb / 7P |
30A 30V MOS Schottky Rectifier
|
SHENZHEN FUMAN ELECTRON... |
FM53
|
205Kb / 3P |
-30V P channel enhanced MOS FET
|