Fabricant | No de pièce | Fiches technique | Description |
Toshiba Semiconductor |
TC58NVG1S3ETA00
|
497Kb / 65P |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
|
TH58NVG5S0FTA20
|
677Kb / 73P |
32 GBIT (4G 횞 8 BIT) CMOS NAND E2PROM
|
TH58NS100DC
|
432Kb / 43P |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
TH58BYG3S0HBAI4
|
2Mb / 54P |
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
2018-06-01C |
TH58BVG3S0HBAI6
|
2Mb / 54P |
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
2018-06-01C |
TH58BVG3S0HTAI0
|
2Mb / 54P |
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
2018-06-01C |
TH58BVG3S0HBAI4
|
2Mb / 54P |
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
2018-06-01C |
TC58NVG2S3ETA00
|
499Kb / 70P |
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
|
TC74HC30AP
|
252Kb / 8P |
CMOS Digital Integrated Circuit Silicon Monolithic 8-Input NAND Gate
|
KEC(Korea Electronics) |
KIC7WZ00FK
|
78Kb / 3P |
SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT(2-INPUT NAND GATE)
|