Fabricant | No de pièce | Fiches technique | Description |
Infineon Technologies A... |
IDH09G65C5
|
1Mb / 11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2012-12-10 |
IDH10G65C5
|
1Mb / 11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2012-12-10 |
IDW10G65C5
|
1Mb / 11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2013-01-15 |
IDW20G65C5
|
1Mb / 11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2013-01-15 |
IDW16G65C5
|
1Mb / 11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2013-01-15 |
IDW12G65C5
|
1Mb / 11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2013-01-15 |
IDH05G65C5
|
1Mb / 11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2012-12-10 |
IDW40G65C5
|
1Mb / 11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2013-01-15 |
IDH04G65C5
|
1Mb / 13P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2012-12-10 |
IDH06G65C5
|
1Mb / 11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2012-12-10 |