Fabricant | No de pièce | Fiches technique | Description |
Motorola, Inc |
MGY20N120D
|
254Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
ON Semiconductor |
MGY20N120D
|
171Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
REV 1 |
Motorola, Inc |
MGW12N120D
|
250Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
ON Semiconductor |
MGW12N120D
|
168Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
1998 REV 2 |
Motorola, Inc |
MGV12N120D
|
79Kb / 4P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
MGW20N60D
|
246Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
ON Semiconductor |
MGP4N60ED
|
146Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
1998 REV 1 |
MGY25N120D
|
171Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
REV 2 |
Motorola, Inc |
MGY25N120D
|
256Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
MGY30N60D
|
254Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|