Fabricant | No de pièce | Fiches technique | Description |
Infineon Technologies A... |
PTFB241402F
|
810Kb / 13P |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15 |
Cree, Inc |
PXAC243502FV
|
543Kb / 10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
|
Infineon Technologies A... |
PXAC243502FV
|
1Mb / 10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22 |
Cree, Inc |
PTFB201402FC
|
595Kb / 14P |
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz
|
Infineon Technologies A... |
PTAC240502FC
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz
Rev. 02.3, 2016-06-21 |
Cree, Inc |
PXAC241702FC
|
577Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
|
PTAC240502FC
|
606Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz
|
Infineon Technologies A... |
PXAC241702FC
|
1Mb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
Rev. 02.1, 2016-06-22 |
Cree, Inc |
PXAC241002FC
|
279Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
|
WOLFSPEED, INC. |
PTAC240502FC_V1
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz
Rev. 05, 2023-06-28 |