Fabricant | No de pièce | Fiches technique | Description |
Infineon Technologies A... |
PTF210101M
|
276Kb / 8P |
High Power RF LDMOS Field Effect Transistor 10 W, 2110 ??2170 MHz
Rev. 02.1, 2009-02-18 |
PTF080101M
|
258Kb / 8P |
High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz
Rev. 02.1, 2009-02-18 |
PTFB201402FC
|
841Kb / 14P |
High Power RF LDMOS Field Effect Transistor
Rev. 03.1, 2016-06-14 |
PTFC270101M
|
409Kb / 21P |
High Power RF LDMOS Field Effect Transistor
Rev. 04, 2015-04-01 |
PTFB183408SV
|
248Kb / 15P |
High Power RF LDMOS Field Effect Transistor
Rev. 03, 2014-03-07 |
PXAC243502FV
|
1Mb / 10P |
High Power RF LDMOS Field Effect Transistor
Rev. 03.1, 2015-04-13 |
Cree, Inc |
PTFC270101M
|
970Kb / 22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz
|
Infineon Technologies A... |
PTFC270101M
|
410Kb / 22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz
Rev. 04.1, 2016-07-26 |
WOLFSPEED, INC. |
PTFC270101M
|
933Kb / 22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Rev. 07, 2023-06-28 |
Infineon Technologies A... |
PTFB241402F
|
556Kb / 13P |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 03, 2010-04-19 |