Description
The PTF180101M is an unmatched 10-watt GOLDMOS® FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint.

Features
• Typical EDGE performance
   - Average output power = 4.0 W
   - Gain = 17 dB
   - Efficiency = 31%
   - EVM = 1.3 %
• Typical CW performance
   - Output Power at P–1dB = 10 W
   - Gain = 16 dB
   - Efficiency = 50%
• Integrated ESD protection:
   Human Body Model Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
   10 W (CW) output power
• Pb-free and RoHS compliant