Fabricant | No de pièce | Fiches technique | Description |
IP SEMICONDUCTOR CO., L... |
IPT04Q08-TED
|
228Kb / 5P |
High current density due to double mesa technology
|
IPT08Q08-CEA
|
214Kb / 4P |
High current density due to double mesa technology
|
IPT0408-05I
|
230Kb / 4P |
High current density due to double mesa technology
|
IPT12Q08-CEF
|
235Kb / 4P |
High current density due to double mesa technology
|
IPT20Q06-TEA
|
208Kb / 4P |
High current density due to double mesa technology
|
IPT20Q08-TEA
|
208Kb / 4P |
High current density due to double mesa technology
|
IPT08Q08-CED
|
215Kb / 5P |
High current density due to double mesa technology
|
IPT0406-18F
|
432Kb / 4P |
High current density due to double mesa technology
|
IPT0408-05D
|
228Kb / 5P |
High current density due to double mesa technology
|
IPT0406-05I
|
230Kb / 4P |
High current density due to double mesa technology
|
IPT1206-TEA
|
226Kb / 4P |
High current density due to double mesa technology
|