Description The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
Features Approvals: ● BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 ● FIMKO (SETI): EN 60950, Certificate number 12399 ● Underwriters Laboratory (UL) 1577 recognized, file number E-76222 ● VDE 0884, Certificate number 94778
VDE 0884 related features: ● Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak ● Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV ● Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) ● Rated recurring peak voltage (repetitive) VIORM = 600 VRMS ● Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 ● Thickness through insulation ≥ 0.75 mm General features: ● Isolation materials according to UL94-VO ● Pollution degree 2(DIN/VDE 0110 part 1 resp. IEC 664) ● Climatic classification 55/100/21 (IEC 68 part 1) ● Special construction: Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection ● Low temperature coefficient of CTR ● CTR offered in 3 groups ● Coupling System A
Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): ● For appl. class I – IV at mains voltage ≤ 300 V ● For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.
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