TPCF8001 Fiches technique(PDF) - Toshiba Semiconductor

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TPCF8001 Fiches technique (PDF) - Toshiba Semiconductor

TPCF8001 Datasheet PDF - Toshiba Semiconductor


No de pièce	TPCF8001

Télécharger	TPCF8001 Télécharger

Taille du fichier	242.91 Kbytes

Page	7 Pages

Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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Description

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPCF8001 Datasheet (PDF)

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Télécharger Fiches technique

TPCF8001 Datasheet PDF - Toshiba Semiconductor


No de pièce	TPCF8001

Télécharger	TPCF8001 Click to download

Taille du fichier	242.91 Kbytes

Page	7 Pages

Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

Logo

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPCF8001 Fiches technique (HTML) - Toshiba Semiconductor

TPCF8001 Datasheet HTML 1Page - Toshiba Semiconductor

TPCF8001 Datasheet HTML 2Page - Toshiba Semiconductor

TPCF8001 Datasheet HTML 3Page - Toshiba Semiconductor

TPCF8001 Datasheet HTML 4Page - Toshiba Semiconductor

TPCF8001 Datasheet HTML 5Page - Toshiba Semiconductor

TPCF8001 Datasheet HTML 6Page - Toshiba Semiconductor

TPCF8001 Datasheet HTML 7Page - Toshiba Semiconductor

TPCF8001 Détails du produit

Notebook PC Applications
Portable Equipment Applications

• Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 8 S (typ.)
• Low leakage current: IDSS = 10 μA (max.) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V
(VDS = 10 V, ID = 1mA)

Numéro de pièce similaire - TPCF8001

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	TPCF8002	236Kb / 7P	Notebook PC Applications Portable Equipment Applications
	TPCF8002	1Mb / 73P	Bipolar Small-Signal Transistors
	TPCF8003	238Kb / 7P	notebook PC Applications Portable Equipment Applications
	TPCF8003	1Mb / 73P	Bipolar Small-Signal Transistors
	TPCF8004	234Kb / 9P	Lithium-Ion Secondary Batteries

Description similaire - TPCF8001

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	TPC8211	171Kb / 4P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
	TPCF8201	232Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
	SSM3K15AFU	236Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
	TPCP8201	250Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
	TPC8014	213Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
	TPC8210	229Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
	TPCP8402	162Kb / 6P	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
	TPC8110	406Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
	TPCF8102	212Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
	TPCF8301	196Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

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