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HMC-ABH241 Fiches technique (PDF) - Hittite Microwave Corporation

HMC-ABH241 Datasheet PDF - Hittite Microwave Corporation
No de pièce HMC-ABH241
Télécharger  HMC-ABH241 Télécharger

Taille du fichier   143.9 Kbytes
Page   3 Pages
Fabricant  HITTITE [Hittite Microwave Corporation]
Site Internet  http://www.hittite.com
Logo HITTITE - Hittite Microwave Corporation
Description GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz

HMC-ABH241 Datasheet (PDF)

Go To PDF Page Télécharger Fiches technique
HMC-ABH241 Datasheet PDF - Hittite Microwave Corporation

No de pièce HMC-ABH241
Télécharger  HMC-ABH241 Click to download

Taille du fichier   143.9 Kbytes
Page   3 Pages
Fabricant  HITTITE [Hittite Microwave Corporation]
Site Internet  http://www.hittite.com
Logo HITTITE - Hittite Microwave Corporation
Description GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz

HMC-ABH241 Fiches technique (HTML) - Hittite Microwave Corporation

HMC-ABH241 Datasheet HTML 1Page - Hittite Microwave Corporation HMC-ABH241 Datasheet HTML 2Page - Hittite Microwave Corporation HMC-ABH241 Datasheet HTML 3Page - Hittite Microwave Corporation

HMC-ABH241 Détails du produit

General Description
The HMC-ABH241 is a four stage GaAs HEMT MMIC Medium Power Amplifi er which operates between 50 and 66 GHz. The HMC-ABH241 provides 24 dB of gain, and an output power of +17 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. The HMC-ABH241 GaAs HEMT MMIC Medium Power Amplifi er is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Features
   Output IP3: +25 dBm
   P1dB: +17 dBm
   Gain: 24 dB
   Supply Voltage: +5 V
   50 Ohm Matched Input/Output
   Die Size: 3.2 x 1.42 x 0.1 mm

Typical Applications
This HMC-ABH241 is ideal for:
• Short Haul / High Capacity Links
• Wireless LAN Bridges
• Military & Space




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À propos de Hittite Microwave Corporation


Hittite Microwave Corporation was a semiconductor company that designed and manufactured high-performance integrated circuits (ICs), modules, and subsystems for radio frequency (RF), microwave, and millimeter-wave applications. The company was founded in 1985 and was based in Chelmsford, Massachusetts.

Hittite Microwave's products were used in various applications, including cellular infrastructure, test and measurement equipment, military and aerospace, broadband, and fiber optics. The company's product portfolio included amplifiers, mixers, switches, attenuators, synthesizers, and other RF and microwave components.

In 2014, Analog Devices, Inc. (ADI), a leading semiconductor company specializing in signal processing and analog technologies, acquired Hittite Microwave Corporation for approximately $2.45 billion. After the acquisition, Hittite Microwave became part of ADI's RF and Microwave business unit.

Today, Analog Devices, Inc. continues to provide high-performance RF and microwave products and solutions for a broad range of applications, leveraging the expertise and technologies gained through the acquisition of Hittite Microwave Corporation.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.




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