MRF904 Fiches technique(PDF) - Advanced Power Technology

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MRF904 Fiches technique (PDF) - Advanced Power Technology

MRF904 Datasheet PDF - Advanced Power Technology


No de pièce	MRF904

Télécharger	MRF904 Télécharger

Taille du fichier	115.24 Kbytes

Page	4 Pages

Fabricant	ADPOW [Advanced Power Technology]

Site Internet	http://www.advpowertech.com

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Description

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF904 Datasheet (PDF)

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Télécharger Fiches technique

MRF904 Datasheet PDF - Advanced Power Technology


No de pièce	MRF904

Télécharger	MRF904 Click to download

Taille du fichier	115.24 Kbytes

Page	4 Pages

Fabricant	ADPOW [Advanced Power Technology]

Site Internet	http://www.advpowertech.com

Logo

Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF904 Fiches technique (HTML) - Advanced Power Technology

MRF904 Datasheet HTML 1Page - Advanced Power Technology

MRF904 Datasheet HTML 2Page - Advanced Power Technology

MRF904 Datasheet HTML 3Page - Advanced Power Technology

MRF904 Datasheet HTML 4Page - Advanced Power Technology

MRF904 Détails du produit

DESCRIPTION:
Designed primarily for use in High Gain, low noise general-purpose amplifiers.

Features
• Silicon NPN, high Frequency, To-72 packaged, Transistor
• High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz
7 dB (typ) @ f = 1 GHz
• Low Noise Figure
NF = 1.5 dB (typ) @ f = 450 MHz
• High FT - 4 GHz (typ) @ IC = 15 mAdc

Numéro de pièce similaire - MRF904

Fabricant	No de pièce	Fiches technique	Description
Microsemi Corporation	MRF904	85Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Semiconductor	MRF904	38Kb / 1P	NPN SILICON RF TRANSISTOR
Motorola, Inc	MRF9045	648Kb / 12P	RF POWER FIELD EFFECT TRANSISTORS
Freescale Semiconductor...	MRF9045LR1	227Kb / 8P	RF Power Field Effect Transistors
Freescale Semiconductor...	MRF9045LR1	397Kb / 11P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Description similaire - MRF904

Fabricant	No de pièce	Fiches technique	Description
Microsemi Corporation	BFR91	170Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	BFY90	84Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	2N6304	86Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF559	208Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF5812	173Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF5943	174Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technolo...	MRF544	302Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	BFR90	120Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF581	282Kb / 6P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation	MRF581	162Kb / 6P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
New Jersey Semi-Conduct...	BFR96	81Kb / 3P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

À propos de Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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