General Description

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional switching PWM controllers, and battery chargers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

–6.9 A, –30 V.  RDS(ON)= 22 m:@ VGS= –10 V

                    RDS(ON)= 35 m:@ VGS= – 4.5 V

Extended VGSSrange (–25V) for battery applications

ESD protection diode (note 3)

High performance trench technology for extremely low RDS(ON)

High power and current handling capability