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MT28F1284W18 Fiches technique (PDF) - Micron Technology

MT28F1284W18 Datasheet PDF - Micron Technology
No de pièce MT28F1284W18
Télécharger  MT28F1284W18 Télécharger

Taille du fichier   785.56 Kbytes
Page   66 Pages
Fabricant  MICRON [Micron Technology]
Site Internet  http://www.micron.com
Logo MICRON - Micron Technology
Description 1.8V Low Voltage, Extended Temperature

MT28F1284W18 Datasheet (PDF)

Go To PDF Page Télécharger Fiches technique
MT28F1284W18 Datasheet PDF - Micron Technology

No de pièce MT28F1284W18
Télécharger  MT28F1284W18 Click to download

Taille du fichier   785.56 Kbytes
Page   66 Pages
Fabricant  MICRON [Micron Technology]
Site Internet  http://www.micron.com
Logo MICRON - Micron Technology
Description 1.8V Low Voltage, Extended Temperature

MT28F1284W18 Fiches technique (HTML) - Micron Technology

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MT28F1284W18 Détails du produit

General Description
The MT28F1284W18 is a high-performance, high-density, nonvolatile memory solution that can significantly improve system performance. This architecture features a multipartition configuration that supports READ-While-PROGRAM/ERASE operations with no latency. An 8Mb partition size enables optimal design flexibility.

Features
    Dedicated commands to decrease programming times for both in-factory and in-system operations
    Fast programming algorithm (FPA) for fast PROGRAM operation
    16-word page
    Flexible 8Mb multipartition architecture
    Single word (16-bit) data bus
    Support for true concurrent operation with zero latency
    Basic configuration:
        • 135 individually programmable/erasable blocks
        • 16 partitions (8Mb each for code and data storage)
    Operating Voltage
        • VCC = 1.70V (MIN)–1.95V (MAX)
        • VCCQ = 1.70V (MIN)–2.24V (MAX)
    VPP = 1.8V (TYP) for in-system PROGRAM/ERASE
        • 12V ±5% (HV) VPP tolerant (factory programming compatibility)
    Random access time: 60ns @ 1.70V VCC
    Burst mode read access
        • MAX clock rate: 66 MHz (tCLK = 15ns)
        • MAX clock rate: 54 MHz (tCLK = 18.5ns)
        • Burst latency 60ns @1.70V VCC and 66 MHz
        • 4 word, 8 word, 16 word, and continuous burst modes
        • tACLK: 14ns @ 1.70V VCC and 54 MHz
        • tACLK: 11ns @ 1.70V VCC and 66 MHz
    Page mode read access
        • Interpage read access: 60ns @ 1.70V VCC
        • Intrapage read access: 15ns @ 1.70V VCC
    Low power consumption (VCC = 1.95V)
        • Burst read @ 66 MHz <10mA (TYP)
        • Standby < 50µA(TYP)
        • Automatic power save (APS)
    Enhanced program and erase suspend options
        • ERASE-SUSPEND-to-READ within same partition
        • PROGRAM-SUSPEND-to-READ within same partition
        • ERASE-SUSPEND-to-PROGRAM within same partition
    Dual 64-bit chip protection registers for security purposes
    Cross-compatible command support
        • Extended command set
        • Common flash interface
    Programmable WAIT# configuration
    Clock suspend
    100,000 ERASE cycles per block




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