Fabricant | No de pièce | Fiches technique | Description |
Toshiba Semiconductor |
TH58NS100DC
|
432Kb / 43P |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Elite Semiconductor Mem... |
F59L1G81MB
|
1Mb / 51P |
1 Gbit (128M x 8) 3.3V NAND Flash Memory
|
F59L1G81LB
|
1Mb / 49P |
1 Gbit (128M x 8) 3.3V NAND Flash Memory
|
Toshiba Semiconductor |
TH58NVG5S0FTA20
|
677Kb / 73P |
32 GBIT (4G 횞 8 BIT) CMOS NAND E2PROM
|
TC58128AFT
|
617Kb / 33P |
128-MBIT (16M 횞 8 BITS) CMOS NAND E2PROM
|
Samsung semiconductor |
K9T1G08U0M
|
888Kb / 38P |
128M x 8 Bits NAND Flash Memory
|
Elite Semiconductor Mem... |
F59D1G81MA
|
1Mb / 51P |
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
|
F59D1G81MB
|
1Mb / 54P |
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
|
F59D1G81LB
|
1Mb / 53P |
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
|
Toshiba Semiconductor |
TH58BYG3S0HBAI4
|
2Mb / 54P |
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
2018-06-01C |