FLL107ME Fiches technique(PDF) - Eudyna Devices Inc

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FLL107ME Fiches technique (PDF) - Eudyna Devices Inc

FLL107ME Datasheet PDF - Eudyna Devices Inc


No de pièce	FLL107ME

Télécharger	FLL107ME Télécharger

Taille du fichier	83.16 Kbytes

Page	4 Pages

Fabricant	EUDYNA [Eudyna Devices Inc]

Site Internet	http://www.sei-device.com/index.asp

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Description

L-Band Medium & High Power GaAs FET

FLL107ME Datasheet (PDF)

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Télécharger Fiches technique

FLL107ME Datasheet PDF - Eudyna Devices Inc


No de pièce	FLL107ME

Télécharger	FLL107ME Click to download

Taille du fichier	83.16 Kbytes

Page	4 Pages

Fabricant	EUDYNA [Eudyna Devices Inc]

Site Internet	http://www.sei-device.com/index.asp

Logo

Description	L-Band Medium & High Power GaAs FET

FLL107ME Fiches technique (HTML) - Eudyna Devices Inc

FLL107ME Datasheet HTML 1Page - Eudyna Devices Inc

FLL107ME Datasheet HTML 2Page - Eudyna Devices Inc

FLL107ME Datasheet HTML 3Page - Eudyna Devices Inc

FLL107ME Datasheet HTML 4Page - Eudyna Devices Inc

FLL107ME Détails du produit

DESCRIPTION

The FLL107ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance

FEATURES

• High Output Power: P1dB=29.5dBm (Typ.)

• High Gain: G1dB=13.5dB (Typ.)

• High PAE: ηadd=47% (Typ.)

• Proven Reliability

• Hermetically Sealed Package

Numéro de pièce similaire - FLL107ME

Fabricant	No de pièce	Fiches technique	Description
Fujitsu Component Limit...	FLL1200IU-2	92Kb / 4P	L-Band Medium & High Power GaAs FET
Eudyna Devices Inc	FLL1200IU-3	106Kb / 4P	L-Band High Power GaAs FET
Eudyna Devices Inc	FLL120MK	101Kb / 4P	L-Band Medium & High Power GaAs FET
List of Unclassifed Man...	FLL1500IU-2C	153Kb / 4P	L-Band High Power GaAs FET
Fujitsu Component Limit...	FLL177	229Kb / 4P	L-BAND MEDIUM & HIGH POWER GAAS FET

Description similaire - FLL107ME

Fabricant	No de pièce	Fiches technique	Description
Eudyna Devices Inc	FLL57MK	101Kb / 4P	L-Band Medium & High Power GaAs FET
List of Unclassifed Man...	FLL400IP-3	221Kb / 4P	L-Band Medium & High Power GaAs FET
Fujitsu Component Limit...	FLU17ZM	236Kb / 8P	L-Band Medium & High Power GaAs FET
Fujitsu Component Limit...	FLL1200IU-2	92Kb / 4P	L-Band Medium & High Power GaAs FET
Eudyna Devices Inc	FLL200IB-1	125Kb / 6P	L-Band Medium & High Power GaAs FET
Fujitsu Component Limit...	FLL177	229Kb / 4P	L-BAND MEDIUM & HIGH POWER GAAS FET
List of Unclassifed Man...	FLU35ZM	225Kb / 8P	L-Band Medium & High Power GaAs FET
Eudyna Devices Inc	FLU10ZM	235Kb / 8P	L-Band Medium & High Power GaAs FET
	FLL600IQ-3	107Kb / 4P	L-Band Medium & High Power GaAs FET
	FLU10XM	81Kb / 4P	L-Band Medium & High Power GaAs FET

À propos de Eudyna Devices Inc

Eudyna Devices Inc. is a semiconductor company that specializes in the design, development, and production of high-frequency, high-power, and high-reliability semiconductor devices. The company was founded in 1999 in Japan and has since expanded globally, with subsidiaries in the United States, Europe, and Asia.

Eudyna Devices Inc. produces a wide range of products, including microwave and millimeter-wave transistors, amplifiers, and diodes, which are used in various applications such as wireless communications, satellite broadcasting, and radar systems. The company's products are known for their high performance and reliability, and they are used by major companies in the telecommunications and defense industries.

In 2015, Eudyna Devices Inc. merged with Fujitsu Electronics Inc. to form the new company, Fujitsu Electronics Inc. The company continues to operate under the Fujitsu brand, and its products are marketed under the name Fujitsu RF Devices.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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