Fabricant | No de pièce | Fiches technique | Description |
Samsung semiconductor |
K4C89363AF
|
1Mb / 58P |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
Integrated Silicon Solu... |
IS42S16128
|
638Kb / 75P |
128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Circuit Solu... |
IS42S8800
|
1Mb / 68P |
2(1)M words x 8(16) bits x 4 banks (64-mbit) synchronous dynamic ram
|
Integrated Silicon Solu... |
IS42S16100C1
|
912Kb / 81P |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Winbond |
W9812G6JH
|
834Kb / 42P |
2M x 4 BANKS x 16 BITS SDRAM
|
W9864G6DB
|
1Mb / 48P |
1M x 4 BANKS x 16 BITS SDRAM
|
W9812G6JB-6I-TR
|
1Mb / 42P |
2M X 4 BANKS X 16 BITS SDRAM
|
W9864G6KH-5-TR
|
693Kb / 42P |
1M X 4 BANKS X 16 BITS SDRAM
|
W986416DH
|
1Mb / 48P |
1M X 4 BANKS X 16 BITS SDRAM
|
W9864G6JH
|
841Kb / 43P |
1M x 4 BANKS x 16 BITS SDRAM
|