Fabricant | No de pièce | Fiches technique | Description |
Renesas Technology Corp |
PF08127
|
140Kb / 18P |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
Oct. 2002 |
E2081606_PF08127B
|
183Kb / 16P |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
|
Hitachi Semiconductor |
PF08103A
|
42Kb / 8P |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
|
PF08103B
|
34Kb / 7P |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
|
PF01411A
|
25Kb / 4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
PF01411B
|
26Kb / 4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
PF01412A
|
25Kb / 4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
PF01410A
|
25Kb / 4P |
MOS FET Power Amplifier Module for GSM Handy Phone
|
Renesas Technology Corp |
PF08134
|
138Kb / 16P |
MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone
May 13, 2004 |
PF08134B
|
123Kb / 14P |
MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone
|