Fabricant | No de pièce | Fiches technique | Description |
WOLFSPEED, INC. |
GTVA262701FA_V2
|
506Kb / 8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
Rev. 04.3, 2022-1-27 |
GTVA262701FA
|
506Kb / 8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
Rev. 04.3, 2022-1-27 |
Cree, Inc |
GTVA262711FA
|
464Kb / 9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
|
WOLFSPEED, INC. |
GTVA263202FC
|
632Kb / 8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz
Rev. 04.1, 2022-1-27 |
Cree, Inc |
GTVA263202FC
|
458Kb / 8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
|
GTVA261802FC
|
495Kb / 8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
|
WOLFSPEED, INC. |
GTVA261802FC
|
536Kb / 8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz
Rev. 02.1, 2022-1-27 |
GTVA262711FA
|
594Kb / 9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz
Rev. 04.4, 2022-1-27 |
GTVA261701FA-V1
|
750Kb / 10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz
Rev. 05.1, 2022-1-27 |
Cree, Inc |
GTVA261701FA
|
591Kb / 10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
|