PTFB201402FC Fiches technique(PDF) - Cree, Inc

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PTFB201402FC Fiches technique (PDF) - Cree, Inc

PTFB201402FC Datasheet PDF - Cree, Inc


No de pièce	PTFB201402FC

Télécharger	PTFB201402FC Télécharger

Taille du fichier	595.53 Kbytes

Page	14 Pages

Fabricant	CREE [Cree, Inc]

Site Internet	http://www.cree.com/

Logo

Description

High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz

PTFB201402FC Datasheet (PDF)

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Télécharger Fiches technique

PTFB201402FC Datasheet PDF - Cree, Inc


No de pièce	PTFB201402FC

Télécharger	PTFB201402FC Click to download

Taille du fichier	595.53 Kbytes

Page	14 Pages

Fabricant	CREE [Cree, Inc]

Site Internet	http://www.cree.com/

Logo

Description	High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz

PTFB201402FC Fiches technique (HTML) - Cree, Inc

PTFB201402FC Datasheet HTML 1Page - Cree, Inc

PTFB201402FC Datasheet HTML 2Page - Cree, Inc

PTFB201402FC Datasheet HTML 3Page - Cree, Inc

PTFB201402FC Datasheet HTML 4Page - Cree, Inc

PTFB201402FC Datasheet HTML 5Page - Cree, Inc

PTFB201402FC Datasheet HTML 6Page - Cree, Inc

PTFB201402FC Datasheet HTML 7Page - Cree, Inc

PTFB201402FC Datasheet HTML 8Page - Cree, Inc

PTFB201402FC Datasheet HTML 9Page - Cree, Inc

PTFB201402FC Datasheet HTML 10Page - Cree, Inc

PTFB201402FC Détails du produit

Description
The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Wolfspeed’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability.

Features
• Broadband internal matching
• Typical CW performance, 28 V, single side
- Output power, P1dB = 70 W
- Efficiency = 56%
• Integrated ESD protection
• Excellent thermal stability
• Capable of handling 10:1 VSWR @ 28 V, 70 W
(CW) output power, per side
• Pb-free and RoHS-compliant

Numéro de pièce similaire - PTFB201402FC

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	PTFB201402FC	841Kb / 14P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2016-06-14
	PTFB201402FCV1R0	841Kb / 14P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2016-06-14
	PTFB201402FCV1R0XTMA1	841Kb / 14P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2016-06-14
	PTFB201402FCV1R250	841Kb / 14P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2016-06-14
	PTFB201402FCV1R250XTMA1	841Kb / 14P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2016-06-14

Description similaire - PTFB201402FC

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	PXAC201602FC	402Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
Cree, Inc	PXAC201602FC	529Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz
Infineon Technologies A...	PTFB241402F	556Kb / 13P	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz Rev. 03, 2010-04-19
Infineon Technologies A...	PTFB241402F	810Kb / 13P	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz Rev. 04.1, 2016-06-15
Cree, Inc	PTFC270051M	745Kb / 14P	High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz
Infineon Technologies A...	PXAC243502FV	1Mb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
Infineon Technologies A...	PTFA220121M	381Kb / 21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz Rev. 10, 2015-10-23
Cree, Inc	PTFC270101M	970Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz
Infineon Technologies A...	PTFC270101M	410Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26
Cree, Inc	PTFA220121M	955Kb / 21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

À propos de Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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