Fabricant | No de pièce | Fiches technique | Description |
Infineon Technologies A... |
PTFA220121M
|
381Kb / 21P |
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
Rev. 10, 2015-10-23 |
PTFA220121M
|
245Kb / 19P |
High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz
Rev. 07, 2010-04-15 |
PTFA220041M
|
331Kb / 18P |
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz
Rev. 10.1, 2016-06-01 |
PTFA220081M
|
1Mb / 17P |
High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz
Rev. 04, 2010-06-09 |
PTFA220041M
|
1Mb / 18P |
High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz
Rev. 08, 2010-06-07 |
Cree, Inc |
PTFC270051M
|
745Kb / 14P |
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz
|
Infineon Technologies A... |
PXAC243502FV
|
1Mb / 10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22 |
Cree, Inc |
PTFC270101M
|
970Kb / 22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz
|
Infineon Technologies A... |
PTFC270101M
|
410Kb / 22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz
Rev. 04.1, 2016-07-26 |
PTFC270051M
|
293Kb / 14P |
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz
Rev. 01.1, 2016-07-26 |