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PTFA220121M Fiches technique (PDF) - Cree, Inc

PTFA220121M Datasheet PDF - Cree, Inc
No de pièce PTFA220121M
Télécharger  PTFA220121M Télécharger

Taille du fichier   955.14 Kbytes
Page   21 Pages
Fabricant  CREE [Cree, Inc]
Site Internet  http://www.cree.com/
Logo CREE - Cree, Inc
Description High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

PTFA220121M Datasheet (PDF)

Go To PDF Page Télécharger Fiches technique
PTFA220121M Datasheet PDF - Cree, Inc

No de pièce PTFA220121M
Télécharger  PTFA220121M Click to download

Taille du fichier   955.14 Kbytes
Page   21 Pages
Fabricant  CREE [Cree, Inc]
Site Internet  http://www.cree.com/
Logo CREE - Cree, Inc
Description High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

PTFA220121M Fiches technique (HTML) - Cree, Inc

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PTFA220121M Détails du produit

Description
The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS device offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

Features
• Typical two-carrier WCDMA performance at
   2140 MHz, 8 dB PAR
   - POUT = 33 dBm Avg
   - ACPR = –45.5 dBc
• Typical two-carrier WCDMA performance at
   877 MHz, 8 dB PAR
   - POUT = 33 dBm Avg
   - ACPR = –44.5 dBc
• Typical CW performance, 2140 MHz, 28 V
   - POUT = 41.6 dBm
   - Efficiency = 53.5%
   - Gain = 15.5 dB
• Typical CW performance, 877 MHz, 28 V
   - POUT = 41.8 dBm
   - Efficiency = 60%
   - Gain = 19.9 dB
• Capable of handling 10:1 VSWR @ 28 V, 12 W
   (CW) output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant




Numéro de pièce similaire - PTFA220121M

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Description similaire - PTFA220121M

FabricantNo de pièceFiches techniqueDescription
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1Mb / 17P
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À propos de Cree, Inc


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.




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