Fabricant | No de pièce | Fiches technique | Description |
Fuji Electric |
2SK3451-01
|
107Kb / 4P |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
|
Advanced Power Electron... |
AP60N03GJ
|
72Kb / 4P |
Low On-Resistance Fast Switching
|
AP7811GM
|
83Kb / 6P |
Low On-Resistance, Fast Switching
|
AP60N03GH
|
67Kb / 4P |
Low On-Resistance Fast Switching
|
AP4410GM
|
208Kb / 5P |
Low On-Resistance, Fast Switching
|
Torex Semiconductor |
XP151A02BOMR
|
54Kb / 4P |
N-Channel Power MOS FET with low on-state resistance and ultra High-Speed Switching Characteristics.
|
XP161A02A1PR
|
149Kb / 4P |
N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
|
Fuji Electric |
1MBI800PN-180
|
162Kb / 4P |
Low loss high speed switching IGBT Modules
|
Advanced Power Electron... |
AP6910GSM-HF
|
90Kb / 7P |
Low On-resistance, Fast Switching Characteristic
|
AP6982GM
|
102Kb / 7P |
Low On-resistance, Fast Switching Characteristic
|