Fabricant | No de pièce | Fiches technique | Description |
Toshiba Semiconductor |
GT8G132
|
338Kb / 6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT60M323
|
193Kb / 6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT20J101
|
259Kb / 6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT15M321
|
269Kb / 6P |
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
GT60M322
|
191Kb / 6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT15Q311
|
172Kb / 7P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT80J101B
|
69Kb / 6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT50G321
|
287Kb / 6P |
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
GT50J325
|
170Kb / 7P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT50J121
|
317Kb / 6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|