Fabricant | No de pièce | Fiches technique | Description |
Infineon Technologies A... |
PXAC261002FC
|
162Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
Rev. 03.3, 2016-06-15 |
PTFC261402FC
|
231Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz
Rev. 05, 2016-06-21 |
PTFC260202FC
|
870Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 ??2690 MHz
Rev. 03.3, 2016-06-21 |
PTFC262157FH
|
1Mb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ??2690 MHz
Rev. 03.1, 2016-06-21 |
PTFC262808SV
|
180Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz
Rev. 02.1, 2013-08-02 |
Cree, Inc |
PXAC261212FC
|
557Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
|
Infineon Technologies A... |
PTFC262808FV
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz
Rev. 03, 2016-06-22 |
Cree, Inc |
PTFC262808FV
|
806Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz
|
Infineon Technologies A... |
PXAC261212FC
|
1Mb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Rev. 02.2, 2016-06-22 |
Cree, Inc |
PTFC261402FC
|
322Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz
|