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GTVA126001EC Fiches technique (PDF) - Cree, Inc

GTVA126001EC Datasheet PDF - Cree, Inc
No de pièce GTVA126001EC
Télécharger  GTVA126001EC Télécharger

Taille du fichier   615.07 Kbytes
Page   9 Pages
Fabricant  CREE [Cree, Inc]
Site Internet  http://www.cree.com/
Logo CREE - Cree, Inc
Description Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz

GTVA126001EC Datasheet (PDF)

Go To PDF Page Télécharger Fiches technique
GTVA126001EC Datasheet PDF - Cree, Inc

No de pièce GTVA126001EC
Télécharger  GTVA126001EC Click to download

Taille du fichier   615.07 Kbytes
Page   9 Pages
Fabricant  CREE [Cree, Inc]
Site Internet  http://www.cree.com/
Logo CREE - Cree, Inc
Description Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz

GTVA126001EC Fiches technique (HTML) - Cree, Inc

GTVA126001EC Datasheet HTML 1Page - Cree, Inc GTVA126001EC Datasheet HTML 2Page - Cree, Inc GTVA126001EC Datasheet HTML 3Page - Cree, Inc GTVA126001EC Datasheet HTML 4Page - Cree, Inc GTVA126001EC Datasheet HTML 5Page - Cree, Inc GTVA126001EC Datasheet HTML 6Page - Cree, Inc GTVA126001EC Datasheet HTML 7Page - Cree, Inc GTVA126001EC Datasheet HTML 8Page - Cree, Inc GTVA126001EC Datasheet HTML 9Page - Cree, Inc



Numéro de pièce similaire - GTVA126001EC

FabricantNo de pièceFiches techniqueDescription
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WOLFSPEED, INC.
GTVA126001EC-V1-R0 WOLFSPEED-GTVA126001EC-V1-R0 Datasheet
443Kb / 8P
   Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz
Rev. P06, 2020-03-10
GTVA126001EC-V1-R2 WOLFSPEED-GTVA126001EC-V1-R2 Datasheet
443Kb / 8P
   Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz
Rev. P06, 2020-03-10
GTVA126001EC_FC WOLFSPEED-GTVA126001EC_FC Datasheet
443Kb / 8P
   Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz
Rev. P06, 2020-03-10
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Description similaire - GTVA126001EC

FabricantNo de pièceFiches techniqueDescription
logo
Cree, Inc
GTVA126001EFC CREE-GTVA126001EFC Datasheet
615Kb / 9P
   Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz
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285Kb / 4P
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WOLFSPEED, INC.
GTVA101K42EV WOLFSPEED-GTVA101K42EV Datasheet
2Mb / 14P
   Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, DC – 1400 MHz
Rev. 4.5, March 2021
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Cree, Inc
GTVA101K42EV CREE-GTVA101K42EV Datasheet
1Mb / 4P
   Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 ??1215 MHz
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581Kb / 10P
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WOLFSPEED, INC.
GTRA360502M-V1 WOLFSPEED-GTRA360502M-V1 Datasheet
844Kb / 9P
   Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz
Rev. 04, 2023-06-27
GTVA220701FA WOLFSPEED-GTVA220701FA Datasheet
736Kb / 9P
   Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz
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Cree, Inc
GTVA261701FA CREE-GTVA261701FA Datasheet
591Kb / 10P
   Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
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WOLFSPEED, INC.
GTVA220701FA_V1 WOLFSPEED-GTVA220701FA_V1 Datasheet
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   Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz
Rev. 05.1, 2022-1-27
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À propos de Cree, Inc


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.




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