Description:

The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications.

Features:

Low Reverse Transfer Capacitance – Crss = 0.03pf (Max)

High Forward Transfer Admittance – |yfe| = 0–20 mmhos

Diode Protected Gates

3

4

Gate 1 Source

Absolute Maximum Ratings:

Drain Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Vdc

Drain–Gate Voltage, VDG1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Vdc

                           VDG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Vdc

Gate Current, IG1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10mAdc

                   IG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10mAdc

Drain Current–Continuous, ID . . . . . . . . . . . . . . . . . . . . . . . . . 60mAdc

Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . 360mW

Derate above 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C

Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . 1.2Watt

Derate above 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C

Storage Channel Temperature Range, Tstg . . . . . . . –65 to +200°C

Junction Temperature Range, TJ . . . . . . . . . . . . . . . . –65 to +175°C

Lead Temperature, 1/16” from Seated Surface for 10 Seconds, TL . . . . 300°C